Method of fabricating metal-insulator-metal (mim) capacitor within topmost thick inter-metal dielectric layers

A structure, comprising:

• a plurality of intermetal dielectric (IMD) layers disposed over a substrate, lower IMD layers of the plurality of IMD layers, each of the lower IMD layers having a first thickness, and upper IMD layers of the plurality IMD layers disposed over the lower IMD layers, and each of the upper IMD layers having a second thickness greater than the first thickness;
• a plurality of metal layers, each of the plurality of metal layers disposed over a respective one of the plurality of IMD layers, each of the plurality of IMD layers separated from adjacent ones of the plurality of IMD layers by at least one of the plurality of metal layers, the plurality of metal layers comprising:
• a first metal layer of the plurality of metal layers disposed over a first upper IMD layer;
• a second metal layer of the plurality of metal layers disposed between the first upper IMD layer and a second upper IMD layer disposed below the first upper IMD layer;
• and
• a third metal layer of the plurality of metal layers disposed between the upper IMD layers and the lower IMD layers;
• and
• a metal-insulator-metal (MIM) capacitor having a topmost surface disposed in the second upper IMD layer, a bottommost surface of the MIM capacitor extending to the topmost surface of the third metal layer.

A structure, comprising:

• a plurality of lower intermetal dielectric (IMD) layers disposed over a substrate, and each having a first thickness;
• a plurality of upper IMD layers disposed over the plurality of lower IMD layers and each having a second thickness greater than the first thickness;
• a first metal layer over a topmost upper IMD layer;
• a second metal layer disposed between the topmost upper IMD layer of the plurality of upper IMD layers and a second upper IMD layer of the plurality of upper IMD layers disposed below the topmost upper IMD layer;
• a third metal layer disposed below the plurality of upper IMD layers;
• a metal-insulator-metal (MIM) capacitor disposed in the second upper IMD layer, and extending at least to a topmost surface of the third metal layer;
• and
• a metal contact formed in the second metal layer and laterally adjacent to the MIM capacitor, wherein the metal contact is in contact with a top electrode of the MIM capacitor.