US 2014/0191360 A1 · ESD PROTECTION DEVICE AND METHOD FOR PRODUCING THE SAME

Abstract

An ESD protection device includes a first discharge electrode and a second discharge electrode arranged to oppose each other, a discharge supporting electrode formed so as to span between the first and second discharge electrodes, and an insulator substrate that retains the first and second discharge electrodes and the discharge supporting electrode. The discharge supporting electrode is constituted by a group of a plurality of metal particles each coated with a semiconductor film containing silicon carbide. This discharge supporting electrode is obtained by firing a semiconductor-metal complex powder in which a semiconductor powder composed of silicon carbide is fixed to surfaces of metal particles. Selection is made so that the relationship between a coating amount Q [wt %] of the semiconductor powder in the semiconductor-metal complex powder and a specific surface area S [m2/g] of the metal powder satisfies Q/S≧8.

Claims9

Dependent claims

An ESD protection device comprising:

a first discharge electrode and a second discharge electrode being arranged to oppose each other;
a discharge supporting electrode formed so as to span between the first and second discharge electrodes;
and
an insulator substrate that retains the first and second discharge electrodes and the discharge supporting electrode,
wherein the discharge supporting electrode is constituted by a group of a plurality of metal particles each coated with a semiconductor film containing silicon carbide.

2 more elements

A method for producing an ESD protection device, the method comprising:

a step of preparing a semiconductor-metal complex powder in which a semiconductor powder containing silicon carbide is fixed to surfaces of metal particles;
a step of preparing an insulator substrate;
a step of forming a green discharge supporting electrode on a surface of or inside the insulator substrate, the green discharge supporting electrode containing the semiconductor-metal complex powder;
a step of forming a first discharge electrode and a second discharge electrode on the surface of, another surface of, or inside the insulator substrate so that the first and second discharge electrodes are opposed to each other on the discharge supporting electrode;
and
a step of firing the green discharge supporting electrode,
wherein the relationship between a coating amount Q [wt %] of the semiconductor powder in the semiconductor-metal complex powder and a specific surface area S [m2/g] of the metal particles satisfies Q/S≧8.

4 more elements

Dependencies are inferred from the claim text.

Esd protection device and method for producing the same

Life of this patent

Esd protection device and method for producing the same

Life of this patent

Abstract

Claims9