Image sensors with multiple output structures

An image sensor comprising:

• two or more pixel sub-arrays each comprising at least one output structure for conversion of charge to voltage, at least one of the sub-arrays comprising:
• a region of active pixels each comprising (i) a photo-sensitive region (PSR) for converting light into electrical charge and (ii) a vertical channel for transfer of charge from the PSR,
• electrically connected to the region of active pixels, a fanned region of dark pixels each (i) comprising a vertical channel for transferring charge and (ii) shielded from incident light,
• electrically connected to the fanned region of dark pixels, an unfanned region of dark pixels each (i) comprising a vertical channel for transferring charge and (ii) shielded from incident light,
• electrically connected to the unfanned region of dark pixels, a horizontal CCD (HCCD), and
• electrically connected to the HCCD, an output structure for conversion of charge to voltage,
• wherein (i) a width of the dark pixels in the fanned region decreases along a direction extending from the array of active pixels to the unfanned region, and (ii) a width of the dark pixels in the unfanned region is substantially constant along a direction extending from the fanned region to the HCCD.