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US 2014/0191353 A1Published application
Solid-state imaging device, method of manufacturing the same, and electronic equipment
AssigneeSony Corporation
InventorsSusumu Hiyama, Kazufumi Watanabe
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Abstract
A solid state imaging device including a semiconductor layer comprising a plurality of photodiodes, a first antireflection film located over a first surface of the semiconductor layer, a second antireflection film located over the first antireflection film, a light shielding layer having side surfaces which are adjacent to at least one of first and the second antireflection film.
Claims20
A solid state imaging device comprising:
- a semiconductor layer comprising a plurality of photodiodes;
- a first antireflection film located over a first surface of the semiconductor layer;
- a second antireflection film located over the first antireflection film;
- and
- a light shielding layer having side surfaces which are adjacent to at least one of the first and the second antireflection film.
2 more elements
A method for manufacturing a solid state imaging device comprising the steps of:
- forming a semiconductor layer comprising a plurality of photodiodes;
- forming a first antireflection film over a first surface of the semiconductor layer;
- forming a second antireflection film over the first antireflection film;
- and
- forming a light shielding layer having side surfaces,
- wherein,
- the side surfaces are adjacent to at least one of the first antireflection film and the second antireflection film.
4 more elements
Dependencies are inferred from the claim text.