Wafer-level packaging method of bsi image sensors having different cutting processes

A wafer-level packaging method of BSI image sensors comprising the following steps:

• S1:
• providing a wafer package body comprising a silicon base, an interconnect layer, a hollow wall and a substrate, an image sensing region and a plurality of pads;
• S2:
• cutting the wafer package body by laser in a first cutting process to separate the interconnect layers of adjacent BSI image sensors, and simultaneously forming V-shaped slots;
• S3:
• forming a first insulative layer on a outmost surface of the wafer package body and the first insulative layer covers inner sides of the V-shaped slots;
• and
• S4:
• cutting the wafer package body via a blade in a second cutting process to obtain independent BSI image sensors.

A BSI image sensor packaging structure comprising:

• a silicon base;
• a transparent substrate;
• an interconnect layer located between the silicon base and the transparent substrate, an image sensing region, a plurality of pads corresponding to the image sensing region and an interconnect-layer cross section exposed to the air;
• and
• an insulative layer covering the interconnect-layer cross section;
• wherein
• the BSI image sensor packaging structure comprises a sidewall which is of a step-shaped configuration, and the sidewall is sealed by the insulative layer.

A BSI image sensor packaging structure comprising:

• a silicon base;
• a transparent substrate;
• an interconnect layer located between the silicon base and the transparent substrate, an image sensing region and a plurality of pads corresponding to the image sensing region, the interconnect layer comprising V-shaped slots;
• and
• an insulative layer covering inner sides of the V-shaped slots;
• wherein
• the interconnect layer connected with the pads is sealed by the silicon base, the transparent substrate and the insulative layer.