Magnetic memory device and method of manufacturing the same

A method of manufacturing a magnetic memory device comprising a memory layer having a vertical magnetization the direction of which changes according to information recorded therein;

• a reference layer with a fixed vertical magnetization against which the magnetization of the memory layer can be compared;
• and a nonmagnetization layer between the memory layer and the reference layer, the memory device memorizing the information by reversal of the magnetization of the memory layer by a spin torque generated when a current flows between the memory layer, the nonmagnetization layer and the reference layer, the method comprising:
• forming a layered structure having at least the reference layer, the nonmagnetization layer and the memory layer on an electrode, the electrode being at the reference layer side of the layered structure, and making the layered structure have a coercive force of the memory layer at a memorization temperature being 0.7 times or less than a coercive force at room temperature;
• and
• placing another electrode which is filled with an insulator of low heat conductivity, and of which a heat conductivity of a center portion in the direction of the layer surface is lower than a heat conductivity of its surroundings at the memory layer side of the layered structure.