US 2014/0191335 A1 · SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

Abstract

The present invention discloses a semiconductor device, comprising a plurality of fins located on a substrate and extending along a first direction; a plurality of gate stack structures extending along a second direction and across each of the fins; a plurality of stress layers located in the fins on both sides of the gate stack structures and having a plurality of source and drain regions therein; a plurality of channel regions located in the fins below the gate stack structures; characterized in that the stress layers have connected parts in the fins and that the channel regions enclose the connected parts.

Claims14

Dependent claims

A semiconductor device, comprising:

a plurality of fins located on a substrate and extending along a first direction;
a plurality of gate stack structures extending along a second direction and across each of the fins;
a plurality of stress layers located in the fins on both sides of the gate stack structures and having a plurality of source and drain regions therein;
a plurality of channel regions located in the fins below the gate stack structures;
and
characterized in that the stress layers have connected parts in the fins and that the channel regions enclose the connected parts.

3 more elements

Dependencies are inferred from the claim text.

Facts

Application

13/812,941Filed 27 Aug 2012

Priority

CN 201210260760.725 Jul 2012

Published

10 Jul 2014

Term ends

Not estimatedThe source records don’t support an estimate.

Classification12 codes

H10D 30/797
Arrangements for exerting mechanical stress on the crystal lattice of the channel regions: being in source or drain regions, e.g. SiGe source or drain
H10D 30/024
Of FETs having insulated gates [IGFET]: of fin field-effect transistors [FinFET]
H10D 30/0245
Of fin field-effect transistors [FinFET]: by further thinning the channel after patterning the channel, e.g. using sacrificial oxidation on fins
H10D 30/62
Insulated-gate field-effect transistors [IGFET]: fin field-effect transistors [FinFET]

Semiconductor device and method of manufacturing the same

Life of this patent

Semiconductor device and method of manufacturing the same

Life of this patent

Abstract

Claims14