Pfet devices with different structures and performance characteristics

A device, comprising

• a first PFET transistor formed in and above a first active region of a semiconducting substrate, said first PFET transistor comprising a first layer of channel semiconductor material;
• and
• a second PFET transistor formed in and above a second active region of said semiconducting substrate, said second PFET transistor comprising a second layer of channel semiconductor material, wherein at least one of a thickness of said first and second channel semiconductor materials or a concentration of germanium in said first and second channel semiconductor materials are different.

A device, comprising

• a first PFET transistor formed in and above a first active region of a semiconducting substrate, said first PFET transistor comprising a first layer of silicon germanium;
• and
• a second PFET transistor formed in and above a second active region of said semiconducting substrate, said second PFET transistor comprising a second layer of silicon germanium, wherein at least one of a thickness of said first and second layers of silicon germanium or a concentration of germanium in said first and second layers of silicon germanium are different.

A device, comprising

• a first PFET transistor formed in and above a first active region of a semiconducting substrate, said first PFET transistor comprising a first layer of silicon germanium;
• and
• a second PFET transistor formed in and above a second active region of said semiconducting substrate, said second PFET transistor comprising a second layer of silicon germanium, wherein a thickness of said first and second layers of silicon germanium are different and a concentration of germanium in said first and second layers of silicon germanium are different.