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US 2014/0191329 A1Published application
Method for producing metal contacts within an integrated circuit, and corresponding integrated circuit
AssigneeSTMicroelectronics (Rousset) SAS
InventorsChristian Rivero, Roger Delattre
Life of this patent
Estimating the term…
Abstract
An integrated circuit includes a MOS transistor having a gate region and source and drain regions separated from the gate region by insulating spacers. At least two metal contact pads respectively contact with two metal silicide regions (for example, a cobalt silicide) which lie within the source and drain regions. The silicide regions are located at the level of lower parts of the two metal contact pads and are separate by a distance from the insulating spacers.
Claims20
A method, comprising:
- forming an orifice in a portion of an integrated circuit, said orifice opening into a zone of a silicon region of the integrated circuit;
- forming a nickel-free first metal layer on a side wall of the orifice and on said zone;
- forming an electrically conductive barrier layer above the nickel-free first metal layer;
- forming a metal silicide from the metal of the nickel-free first metal layer under the barrier layer in contact with the silicon zone;
- and
- filling the orifice with a filling metal covering the electrically conductive barrier layer.
3 more elements
An integrated circuit, comprising:
- at least one metal contact arranged in a first portion of the integrated circuit and having:
- a central metal region covered laterally and in a lower part thereof with an electrically conductive barrier layer, and
- a nickel-free outer metal layer covering the lateral part of the barrier layer,
- said metal contact coming in contact with a silicided region essentially located under the barrier layer at the level of the lower part of the metal contact and comprising a nickel-free metal silicide.
1 more element
Dependencies are inferred from the claim text.