Silicon-on-insulator heat sink
AssigneeInternational Business Machines Corporation
InventorsAlan B. BOTULA, Alvin J. JOSEPH, James A. SLINKMAN, Randy L. WOLF
Life of this patent
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Abstract
An approach for sinking heat from a transistor is provided. A method includes forming a substrate contact extending from a first portion of a silicon-on-insulator (SOI) island to a substrate. The method also includes forming a transistor in a second portion of the SOI island. The method further includes electrically isolating the substrate contact from the transistor by doping the first portion of the SOI island.
Claims20
A method of manufacturing a semiconductor structure, comprising:
- forming a substrate contact extending from a first portion of a silicon-on-insulator (SOI) island to a substrate;
- forming a transistor in a second portion of the SOI island;
- and
- electrically isolating the substrate contact from the transistor by doping the first portion of the SOI island.
A method of manufacturing a semiconductor device, comprising:
- defining an island in a semiconductor layer of a silicon-on-insulator (SOI) wafer;
- forming a trench through the island and an underlying buried insulator layer, wherein the trench extends to or into a substrate under the buried insulator layer;
- forming a substrate contact in the trench, wherein the substrate contact comprises a material having a thermal conductivity that is greater than a thermal conductivity of the buried insulator layer;
- forming a transistor in the island;
- and
- electrically isolating the substrate contact from the transistor by doping a portion of the island.
A semiconductor structure, comprising:
- a substrate;
- a buried insulator layer on the substrate;
- an island of a semiconductor layer on the buried insulator layer;
- a substrate contact extending from a first area of the island to the substrate through the buried insulator layer;
- and
- a transistor in a second area of the island, wherein:
- the substrate contact comprises a material having a thermal conductivity that is greater than a thermal conductivity of the buried insulator layer;
- and
- the substrate contact is electrically isolated from the transistor.
Dependencies are inferred from the claim text.