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US 2014/0191321 A1Published application
Finfet with dielectric isolation by silicon-on-nothing and method of fabrication
AssigneeInternational Business Machines Corporation
InventorsKangguo Cheng, Balasubramanian S. Haran, Shom Ponoth, Theodorus Eduardus Standaert, Tenko Yamashita
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Abstract
An improved finFET and method of fabrication using a silicon-on-nothing process flow is disclosed. Nitride spacers protect the fin sides during formation of cavities underneath the fins for the silicon-on-nothing (SON) process. A flowable oxide fills the cavities to form an insulating dielectric layer under the fins.
Claims29
A semiconductor structure comprising:
- a semiconductor substrate;
- an insulator layer disposed over the semiconductor substrate;
- a plurality of semiconductor fins disposed on the insulator layer;
- and
- a plurality of embedded spacers disposed in the insulator layer adjacent to each fin.
2 more elements
A method of forming a semiconductor structure, comprising:
- forming a sacrificial layer on a semiconductor substrate;
- forming fins on the sacrificial layer;
- forming a shallow trench isolation region on the semiconductor substrate, wherein the shallow trench isolation region is disposed in between each fin;
- forming spacers on the fins;
- recessing the shallow trench isolation region;
- removing the sacrificial layer, thereby forming a void in the semiconductor structure;
- depositing an insulator layer in the void, wherein the insulator layer partially covers the spacers, leaving an exposed portion of the spacers;
- and
- removing the exposed portion of the spacers.
6 more elements
A method of forming a semiconductor structure, comprising:
- forming fins on a semiconductor substrate, the fins having sides;
- forming spacers on the sides of each fin;
- forming a mask region on a first group of fins, and leaving a second group of fins unmasked;
- forming a cavity in the semiconductor substrate between each of the unmasked fins;
- expanding each cavity between each of the unmasked fins with an undercut etch;
- filling each cavity between each of the unmasked fins with an insulator material;
- forming a cavity in the semiconductor substrate between each of the first group of fins;
- expanding each cavity between each of the first group of fins with an undercut etch;
- and
- filling each cavity between each of the first group of fins with an insulator material.
7 more elements
Dependencies are inferred from the claim text.