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US 2014/0191319 A1Published application
Finfet compatible diode for esd protection
AssigneesGlobalfoundries Inc., International Business Machines Corporation
InventorsKangguo Cheng, Shom Ponoth, Balasubramanian Pranatharthiharan, Theodorus Eduardus Standaert, Tenko Yamashita, Robert J. Miller
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Abstract
A diode for integration with finFET devices is disclosed. An in-situ doped epitaxial silicon region is grown on the cathode or anode of the diode to increase the surface area of the junction and overall silicon volume for improved heat dissipation during an ESD event.
Claims20
A semiconductor diode comprising,
- an N− region;
- an L-shaped P− region formed within the N− region, wherein the L-shaped P− region forms an L-shaped junction with the N− region;
- and
- a P+ region disposed above and alongside the P− region.
1 more element
A semiconductor structure, comprising:
- a first silicon region;
- an insulator region disposed over the first silicon region;
- a diode, the diode comprising:
- a second silicon region disposed over the insulator region;
- an N+ region formed in the second silicon region;
- an N− region formed in the second silicon region and disposed adjacent to the N+ region;
- an L-shaped P− region formed within the N− region, wherein the L-shaped P− region forms an L-shaped junction with the N− region;
- a P+ region disposed above and alongside the P− region;
- and
- a finFET adjacent to the diode.
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A method of forming a diode, comprising:
- forming a silicon-on-insulator region;
- forming a polysilicon region on the silicon-on-insulator region;
- depositing a nitride layer over the silicon-on-insulator region;
- forming an N+ region in the silicon-on-insulator region;
- removing a portion of the nitride layer to form an exposed portion of the silicon-on-insulator region;
- forming an in-situ P-doped epitaxial layer on the exposed portion of the silicon-on-insulator region;
- performing an activation anneal;
- and
- forming a first contact over the N+ region and a second contact over the in-situ P-doped epitaxial layer.
6 more elements
Dependencies are inferred from the claim text.