Complementary metal oxide semiconductor field effect transistor, metal oxide semiconductor field effect transistor and manufacturing method thereof

A metal oxide semiconductor field-effect transistor (MOSFET) comprising:

• a substrate;
• a fin structure disposed on the substrate, wherein the fin structure comprises a body portion, two epitaxial portions, and a vertical interface is interposed between the body portion and each of the epitaxial portions;
• two lightly-doped regions respectively and uniformly formed on the entire vertical interface;
• two doped regions respectively disposed in each of the epitaxial portions;
• and
• a gate structure overlying the body portion of the fin structure.

A method for manufacturing a metal oxide semiconductor field-effect transistor (MOSFET) comprising:

• providing a substrate;
• forming a fin semiconductor layer on the substrate;
• forming a gate electrode overlying a portion of the fin semiconductor layer;
• forming a gate spacer disposed on sidewalls of the gate electrode, wherein a portion of the fin semiconductor layer is exposed from the gate spacer;
• removing the fin semiconductor layer exposed from the gate spacer so that a vertical interface is exposed from at least one side of the fin semiconductor layer;
• forming at least an epitaxial layer on the vertical interface, wherein a lightly-doped region is uniformly formed on the entire vertical interface concurrently during a step for forming the epitaxial layer;
• and
• forming a doped region in the epitaxial layer.