Semiconductor device and fabrication method

A method of fabricating a semiconductor device, comprising:

• providing a semiconductor substrate;
• forming a fin on the semiconductor substrate, a metal gate across the fin, and sidewall spacers across the fin on both sides of the metal gate;
• forming a source and a drain by an ion implantation in the semiconductor substrate and in the fin that are on both sides of the sidewall spacers;
• forming a dummy contact across the fin and on each of the both sides of the sidewall spacers, after forming the source and the drain;
• forming an interlayer dielectric layer on the semiconductor substrate, after forming the dummy contact;
• removing the dummy contact to form a contact trench, wherein the dummy contact is made of a material having an etch selectivity sufficiently higher than the fin such that the removing of the dummy contact generates substantially no damage to the fin;
• and
• filling a conductive material in the contact trench to form a trench metal contact, wherein the trench metal contact is formed across the fin, connecting to the source or the drain, and on each of the both sides of the sidewall spacers.

A semiconductor device, comprising:

• a semiconductor substrate;
• a fin disposed on the semiconductor substrate, a gate across the fin, and sidewall spacers across the fin on both sides of the gate;
• a source and a drain disposed in the semiconductor substrate and in the fin that are on both sides of the sidewall spacers;
• and
• a trench metal contact formed across the fin, connecting to the source or the drain, and on each of the both sides of the sidewall spacers, wherein the trench metal contact is formed using a dummy contact by:
• forming the dummy contact across the fin and on each of the both sides of the sidewall spacers, after forming the source and the drain;
• forming an interlayer dielectric layer on the semiconductor substrate, after forming the dummy contact;
• removing the dummy contact to form a contact trench after forming the interlayer dielectric layer, wherein the dummy contact is made of a material having an etch selectivity sufficiently higher than the fin such that the removing of the dummy contact generates substantially no damage to the fin;
• and
• filling a conductive material in the contact trench to form the trench metal contact.