Semiconductor device and method of manufacturing the same

A semiconductor device comprising:

• a first conductivity type semiconductor substrate;
• linear recesses in the first conductivity type semiconductor substrate;
• a source region of a second conductivity type and a drain region of the second conductivity type, spaced apart from each other in the first conductivity type semiconductor substrate below the linear recesses;
• a planar portion of the substrate between the source region and the drain region comprising a first channel region;
• a trench having a constant depth in the substrate along the planar portion and having a side surface and a bottom surface comprising a second channel region,
• wherein the linear recesses are separated from the side surface of the trench by a constant distance, such that the linear recesses follow a contour of the side surface of the trench;
• a gate insulating film on a surface of the planar portion and a surface of the trench portion;
• and
• a gate electrode on the gate insulating film,
• wherein the source region and the drain region are adjacent to the side surface of the trench.