Semiconductor structure and method for manufacturing the same
AssigneeInstitute of Microelectronics, Chinese Academy of Sciences
InventorsLijun Dong, Dapeng Chen
Life of this patent
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Abstract
Provided is a semiconductor structure and a method for manufacturing the same. By the channel reestablishment, the tops of the source/drain regions located on both sides of the spacers are higher than bottoms of the gate stack structure and the spacers, and the source/drain regions laterally extend below the bottoms of the gate stack structure and the spacers and exceed the spacers, thereby reaching the right below of the gate stack structure. Thus, the elevated source/drain MOSFET is obtained. The semiconductor structure reduces the number of process steps, improves efficiency and decreases the cost.
Claims11
A method for manufacturing a semiconductor structure, comprising the steps of:
- a) providing a substrate;
- b) forming a dummy gate stack and source/drain regions on the substrate,
- wherein the dummy gate stack at least comprises a dummy gate;
- and the source/drain regions are located on both sides of the dummy gate stack and extend to right below of the dummy gate stack;
- c) forming an interlayer dielectric layer that covers the substrate, the source/drain regions and the dummy gate stack;
- d) removing a part of the interlayer dielectric layer to expose the dummy gate stack;
- e) removing the dummy gate stack and a part of the substrate right below the dummy gate stack, so as to form an opening, right below which parts of the source/drain regions are reserved;
- f) forming spacers attached to inner sidewalls of the opening;
- and
- g) forming a gate dielectric layer at a bottom of the opening, and filling a conductive material (260) to form a gate stack structure.
A semiconductor structure, comprising:
- a substrate;
- a gate stack structure partially embedded into the substrate and spacers;
- and
- source/drain regions formed in the substrate, wherein
- tops of the source/drain regions located on both sides of the spacers are higher than bottoms of the gate stack structure and the spacers, and
- the source/drain regions laterally extend below the bottoms of the gate stack structure and the spacers and exceed the spacers, thereby reaching right below of the gate stack structure.
Dependencies are inferred from the claim text.