Power semiconductor device

A power semiconductor device including an element portion, and a termination portion provided around the element portion, the power semiconductor device comprising:

• a first-conductivity type semiconductor substrate;
• a second-conductivity type first impurity layer provided at a part of the element portion on an upper surface of the semiconductor substrate;
• a first-conductivity type second impurity layer provided at a part of an upper end of the first impurity layer;
• a gate electrode provided to become in contact with the first impurity layer via a gate insulation film;
• a first electrode provided on a lower surface of the semiconductor substrate;
• a second electrode provided to become in contact with the first impurity layer, on the upper surface of the semiconductor substrate;
• a plurality of second-conductivity type pillar layers provided at least in the semiconductor substrate of the element portion;
• and
• a first insulation film provided in the semiconductor substrate of the termination portion, the first insulation film being provided between the pillar layers adjacent to each other.