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US 2014/0191307 A1Published application
Memory device and method of fabricating thereof
AssigneeMicron Technology, Inc.
InventorsGiulio Albini, Paola Bacciaglia
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Abstract
Subject matter disclosed herein relates to a process flow to form a gate structure of a memory device.
Claims20
A memory device comprising:
- a gate stack disposed on a semiconductor substrate, the gate stack including:
- a hard mask layer;
- a control gate layer;
- and
- a conducting material layer covered by the hard mask layer;
- and
- spacers covering sides of the conducting material layer while exposing sides of the control gate layer, wherein the conducting material layer comprises TaN.
4 more elements
A system comprising:
- a transistor of a memory device, the transistor including spacers covering sides of a conducting material layer while exposing sides of a control gate layer in a gate stack, wherein the conducting material layer comprises TaN, and wherein the conducting material layer is covered by a hard mask layer;
- a memory controller to control the memory device;
- a processing unit to initiate commands to the memory controller for controlling the memory device;
- and
- a bus to connect the memory controller to the processing unit.
2 more elements
Dependencies are inferred from the claim text.