Cmos transistors, fin field-effect transistors and fabrication methods thereof
AssigneeSemiconductor Manufacturing International Corp.
InventorsDONGJIANG WANG, STEVEN ZHANG
Life of this patent
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Abstract
A method is provided for fabricating a transistor. The method includes providing a semiconductor substrate; and configuring a channel region along a first direction. The method also includes forming trenches at both sides of the channel region along a second direction; and forming a magnetic material layer in each of the trenches. Further, the method includes magnetizing the magnetic material layers to form a magnetic field in the channel region between adjacent magnetic material layers; and forming source/drain regions at both ends of the channel region along the first direction.
Claims20
A method for fabricating a transistor, comprising:
- providing a semiconductor substrate;
- configuring a channel region along a first direction;
- forming trenches at both sides of the channel region along a second direction;
- forming a magnetic material layer in each of the trenches;
- magnetizing the magnetic material layer to form a magnetic field between adjacent magnetic material layers in the channel region;
- and
- forming source/drain regions at both ends of the channel region along the first direction.
A CMOS transistor, comprising:
- a semiconductor substrate having an active region;
- a gate dielectric layer and a gate on the active region;
- magnetic material layers at both sides of the active region along a second direction;
- source/drain regions at both sides of the active region along a first direction perpendicular to the second direction;
- a channel region between the source/drain regions;
- and
- a magnetic field in the channel region along a second direction,
- wherein the magnetic field is formed by:
- forming isolation trenches in the semiconductor substrate along the second direction;
- forming a magnetic material layer in each of the trenches;
- and
- magnetizing the magnetic material layers to form the magnetic field.
A fin field-effect transistor, comprising:
- a semiconductor substrate;
- a fin on the semiconductor substrate extending along a first direction;
- a gate crossing over the fin on the semiconductor substrate extending along a second direction perpendicular to the first direction;
- an interlayer dielectric layer on the semiconductor substrate;
- magnetic material layers having a south pole and a north pole in the interlayer dielectric layer at both sides of the fin along a second direction;
- source/drain regions at both ends of the fin along the first direction;
- and
- a magnetic field in a channel region along the second direction under the gate,
- wherein the magnetic field is formed by:
- forming trenches in the interlayer dielectric layer at both sides of the fin along the second direction;
- forming a magnetic material layer in each of the trenches;
- and
- magnetizing the magnetic material layer to form a magnetic field between adjacent magnetic material layers in the channel region.
Dependencies are inferred from the claim text.