Semiconductor devices including back-side integrated circuitry

A semiconductor device, comprising:

• a semiconductor substrate comprising an active surface and an opposing back side surface;
• transistors at the active surface of the semiconductor substrate;
• at least one capacitor laterally adjacent at least one of the transistors at the active surface of the semiconductor substrate;
• an imperforate dielectric material on the active surface of the semiconductor substrate, the imperforate dielectric material covering and in contact with the transistors and the at least one capacitor;
• contact openings extending through the semiconductor substrate from the opposing-back side surface toward the active surface of the semiconductor substrate;
• electrically conductive material in the contact openings, the electrically conductive material in each of the contact openings being electrically connected to one of the transistors or the at least one capacitor;
• and
• laterally extending conductive elements extending over the back side surface of the semiconductor substrate and electrically connected to the conductive material in the contact openings, wherein at least one laterally extending conductive element electrically connected to a first transistor extends laterally underneath a second, different transistor to which the laterally extending conductive element is not electrically connected.