Solid-state imaging element

A solid-state imaging element comprising:

• a first conductivity type substrate;
• a photodiode which is formed on the substrate, and in which carriers generated by photoelectric conversion are accumulated in a second conductivity type accumulation region, the second conductivity type being different from the first conductivity type;
• a source-follower transistor which is formed on the substrate, and which has a gate electrode electrically connected to a floating diffusion region accumulated with the carriers read out from the photodiode and which is provided with a second conductivity type buried channel;
• and
• an element separator which is formed on the substrate, and which is provided around an active region of at least the photodiode and the source-follower transistor, wherein
• the buried channel of the source-follower transistor is formed away from a sidewall of the element separator,
• the buried channel of the source-follower transistor is formed within a channel formation region provided by injecting a second conductivity type impurity into a surface of the first conductivity type substrate,
• a concentration of a first conductivity type impurity injected into a side region of the element separator is at a level of canceling a second conductivity type region included in the channel formation region, and
• the first conductivity type impurity is injected into an outermost surface of the channel formation region of the source-follower transistor.