Image sensors with multiple output structures

An image sensor comprising:

• two or more pixel sub-arrays each comprising at least one output structure for conversion of charge to voltage, at least one of the sub-arrays comprising:
• a region of active pixels each comprising (i) a photo-sensitive region (PSR) for converting light into electrical charge and (ii) a vertical channel for transferring charge from the PSR,
• electrically connected to the region of active pixels, a slanted region of dark pixels each (i) comprising a vertical channel for transferring charge and (ii) shielded from incident light,
• electrically connected to the slanted region of dark pixels, an unslanted region of dark pixels each (i) comprising a vertical channel for transferring charge and (ii) shielded from incident light,
• electrically connected to the unslanted region of dark pixels, a horizontal CCD (HCCD), and
• electrically connected to the HCCD, an output structure for conversion of charge to voltage,
• wherein (i) a direction of charge transfer in the vertical channels within the dark pixels of the slanted region is not parallel to a direction of charge transfer in the vertical channels within the active pixels, and (ii) a direction of charge transfer in the vertical channels within the dark pixels of the unslanted region is substantially parallel to the direction of charge transfer in the vertical channels within the active pixels.