Semiconductor device and method for manufacturing semiconductor device
AssigneeFujitsu Semiconductor Limited
InventorsYOSHIYUKI KOTANI, SHINICHI AKIYAMA
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Abstract
A method for manufacturing a semiconductor device includes forming an electron transit layer on a semiconductor substrate, forming an electron supply layer on the electron transit layer, forming a cap layer on the electron supply layer, forming a protection layer on the cap layer, the protection layer having an opening part, through which a part of the cap layer is exposed, and forming an oxidation film on an exposed surface of the cap layer by a wet process.
Claims12
A method for manufacturing a semiconductor device comprising:
- forming an electron transit layer on a semiconductor substrate;
- forming an electron supply layer on the electron transit layer;
- forming a cap layer on the electron supply layer;
- forming a protection layer on the cap layer, the protection layer that includes an opening part, through which a part of the cap layer is exposed;
- and
- forming an oxidation film on an exposed surface of the cap layer by a wet process.
A method for manufacturing a semiconductor device comprising:
- forming an electron transit layer on a semiconductor substrate;
- forming an electron supply layer on the electron transit layer;
- forming a cap layer on the electron supply layer;
- forming a groove penetrating through the cap layer to reach to the inside of the electron supply layer;
- forming a protection layer on the cap layer, the protection layer that includes an opening part, through which the groove is exposed;
- and
- forming an oxidation film on an exposed surface of the electron supply layer and an exposed surface of the cap layer in the groove by a wet process.
A semiconductor device comprising:
- a semiconductor substrate;
- an electron transit layer formed on the semiconductor substrate;
- an electron supply layer formed on the electron transit layer;
- a cap layer formed on the electron supply layer;
- and
- a gate insulating film formed on the cap layer,
- wherein the cap layer has an oxidation film at the interface between the cap layer and the gate insulating film.
A semiconductor device comprising:
- a semiconductor substrate;
- an electron transit layer formed on the semiconductor substrate;
- an electron supply layer formed on the electron transit layer;
- a cap layer formed on the electron supply layer;
- and
- a groove penetrating through the cap layer to reach to the inside of the electron supply layer;
- and
- a gate insulating film formed in the groove,
- wherein the electron supply layer and the cap layer have an oxidation film at the interface between the electron supply layer and the gate insulating film and at the interface between the cap layer and the gate insulating film, respectively.
Dependencies are inferred from the claim text.