Semiconductor light emitting device

A semiconductor light emitting device comprising:

• a first semiconductor layer of a first conductivity type, the first semiconductor layer including a first portion and a second portion;
• a second electrode provided apart from the first semiconductor layer along a first direction intersecting a second direction from the first portion toward the second portion, the second electrode including
• a first part provided apart from the second portion along the first direction, and
• a second part provided apart from the first portion along the first direction;
• a second semiconductor layer of a second conductivity type provided between the first part and the second portion, the second semiconductor layer contacting the first part;
• a light emitting layer provided between the second semiconductor layer and the second portion;
• a first electrode including a contact part, the contact part being provided between the first portion and the second part, the contact part contacting the first portion;
• and
• a dielectric member provided between the contact part and the second electrode, and between the first semiconductor layer and the second electrode, and wherein a portion of the dielectric member is between the light emitting layer and the second electrode,
• a stacking body including the first semiconductor layer, the second semiconductor layer, and the light emitting layer, the stacking body has a side face, and at least a part of the side face of the stacking body being inclined with respect to the first direction,
• at least a part of an edge of the second semiconductor layer being covered with the dielectric member.

A semiconductor light emitting device comprising:

• a first semiconductor layer of a first conductivity type, the first semiconductor layer including a first portion and a second portion;
• a second electrode provided apart from the first semiconductor layer along a first direction intersecting a second direction from the first portion toward the second portion, the second electrode including
• a first part provided apart from the second portion along the first direction and being light reflective, and
• a second part provided apart from the first portion along the first direction;
• a second semiconductor layer of a second conductivity type provided between the first part and the second portion, the second semiconductor layer contacting the first part;
• a light emitting layer provided between the second semiconductor layer and the second portion;
• a first electrode including
• a contact part provided between the first portion and the second part, the contact part contacting the first portion, and
• a via part contacting the contact part and electrically connected with the contact part;
• a pad electrode electrically connected with the via part, the via part being disposed between the contact part and the pad electrode;
• and
• a dielectric member provided between the contact part and the second electrode, and between the first semiconductor layer and the second electrode, and wherein a portion of the dielectric member is between the light emitting layer and the second electrode,
• a stacking body including the first semiconductor layer, the second semiconductor layer, and the light emitting layer, the stacking body has a side face, and at least a part of the side face of the stacking body being inclined with respect to the first direction, and
• at least a part of an edge of the second semiconductor layer being covered with the dielectric member.