Light emitting device

A light emitting device comprising:

• a light emitting structure including a first conductive semiconductor layer, an active layer provided under the first conductive semiconductor layer, and a second conductive semiconductor layer provided under the active layer;
• a first electrode provided under the light emitting structure and electrically connected to the first conductive semiconductor layer;
• a second electrode provided under the light emitting structure and electrically connected to the second conductive semiconductor layer;
• a first contact portion provided through the light emitting structure and including a first region electrically connected to the first electrode and a second region making contact with a top surface of the first conductive semiconductor layer;
• and
• a first insulating layer provided around the first contact portion,
• wherein the first insulating layer is provided through the second conductive semiconductor layer and the active layer.

A light emitting device comprising:

• a light emitting structure including a first conductive semiconductor layer, an active layer provided under the first conductive semiconductor layer, and a second conductive semiconductor layer provided under the active layer;
• a first electrode provided under the light emitting structure and electrically connected to the first conductive semiconductor layer;
• a second electrode provided under the light emitting structure and electrically connected to the second conductive semiconductor layer;
• a plurality of first contact portions provided through the light emitting structure and including a first region electrically connected to the first electrode and a second region making contact with a top surface of the first conductive semiconductor layer;
• and
• a second contact portion spaced apart from the light emitting structure and electrically connected to the second electrode,
• wherein the plurality of first contact portions are spaced apart from each other on the top surface of the first conductive semiconductor layer, and
• a top surface of the first contact portion is located higher than a top surface of the second contact portion.