Semiconductor light-emitting device

A semiconductor light-emitting device comprising:

• a substrate;
• an optical extraction film in contact with a surface of the substrate and including at least one bonding layer having a refractive index that is larger than a refractive index of the substrate;
• a nitride semiconductor layer in contact with a surface of the optical extraction film and having a refractive index that is equal to or larger than a refractive index of a portion of the optical extraction film of which refractive index is the largest from among all the portions of the optical extraction film;
• and
• a light-emitting structure disposed on the nitride semiconductor layer and including a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer.

A dimming system comprising a semiconductor light-emitting device, the semiconductor light-emitting device including:

• a substrate;
• an optical extraction film being in contact with a surface of the substrate and including at least one bonding layer having a refractive index that is greater larger than a refractive index of the substrate;
• a nitride semiconductor layer being in contact with a surface of the optical extraction film and having a refractive index that is equal to or greater larger than a refractive index of a portion of the optical extraction film of which refractive index is the largest from among all the portions of the optical extraction film;
• and
• a light-emitting structure disposed on the nitride semiconductor layer and including a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer.