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US 2014/0191261 A1Published application
Light Emitting Heterostructure with Partially Relaxed Semiconductor Layer
AssigneeSensor Electronic Technology, Inc.
InventorsMaxim S. Shatalov, Alexander Dobrinsky, Michael Shur, Remigijus Gaska
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Abstract
A light emitting heterostructure including a partially relaxed semiconductor layer is provided. The partially relaxed semiconductor layer can be included as a sublayer of a contact semiconductor layer of the light emitting heterostructure. A dislocation blocking structure also can be included adjacent to the partially relaxed semiconductor layer.
Claims21
A heterostructure comprising:
- a light generating structure having a first side and a second side;
- a n-type contact semiconductor layer located on the first side of the light generating structure;
- and
- a p-type contact semiconductor layer located on the second side of the light generating structure, wherein at least one of the contact semiconductor layers includes an embedded partially relaxed sublayer.
1 more element
A device comprising:
- a mesa structure including:
- a light generating structure having a first side and a second side;
- a n-type contact semiconductor layer located on the first side of the light generating structure;
- and
- a p-type contact semiconductor layer located on the second side of the light generating structure, wherein at least one of the contact semiconductor layers includes an embedded partially relaxed sublayer.
2 more elements
A method comprising:
- forming a heterostructure, the heterostructure comprising:
- a light generating structure having a first side and a second side;
- a n-type contact semiconductor layer located on the first side of the light generating structure;
- and
- a p-type contact semiconductor layer located on the second side of the light generating structure, wherein at least one of the contact semiconductor layers includes an embedded partially relaxed sublayer.
2 more elements
Dependencies are inferred from the claim text.