Semiconductor light emitting device and method for manufacturing same

A manufacturing method of a semiconductor light emitting device, comprising:

• forming a sacrifice layer on a first face of a selected chip in a wafer having a plurality of chips each including a semiconductor layer having the first face, a second face formed on a side opposite thereto, and a light emitting layer, a p-side electrode provided on the second face in a region having the light emitting layer, and an n-side electrode provided on the second face in a region which does not have the light emitting layer;
• forming a fluorescent body layer on the first face of the chip on which the sacrifice layer is not formed;
• and
• removing the sacrifice layer and selectively leaving the fluorescent body layer on the wafer.

A semiconductor light emitting device, comprising:

• not less than three chips, each of the chips including a semiconductor layer having a first face, a second face formed on a side opposite to the first face, and a light emitting layer, a p-side electrode provided on the second face in a region having the light emitting layer, and an n-side electrode provided on the second face in a region without having the light emitting layer;
• different kind of fluorescent body layers provided on the first faces of the chips;
• a first insulating layer which is provided on the second face side and which has a first via leading to the p-side electrode, a second via leading to the n-side electrode, and a interconnect face formed on a side opposite to the first face;
• a p-side interconnect part which is provided on the interconnect face on the first insulating layer and which is electrically connected to the p-side electrode through the first via;
• an n-side interconnect part which is provided on the interconnect face and which is electrically connected to the n-side electrode through the second via;
• and
• a second insulating layer provided between the p-side interconnect part and the n-side interconnect part.