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AssigneeThe Regents of the University of California
InventorsJohn F. Kaeding, Hitoshi Sato, Michael Iza, Hirokuni Asamizu, Hong Zhong, Steven P. DenBaars, Shuji Nakamura
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A method of controlled p-type conductivity in (Al,In,Ga,B)N semiconductor crystals. Examples include {10 11} GaN films deposited on {100} MgAl2O4 spinel substrate miscut in the <011> direction. Mg atoms may be intentionally incorporated in the growing semipolar nitride thin film to introduce available electronic states in the band structure of the semiconductor crystal, resulting in p-type conductivity. Other impurity atoms, such as Zn or C, which result in a similar introduction of suitable electronic states, may also be used.
A method of fabricating a semipolar or nonpolar III-nitride semiconductor, comprising:
A semipolar or nonpolar III-nitride semiconductor, comprising:
A method of fabricating a III-nitride semiconductor, comprising:
Dependencies are inferred from the claim text.