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AssigneeCommissariat A L'energie Atomique Et Aux Energies Alternatives
InventorsMohammed BENWADIH, Abdelkader ALIANE
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A pressure sensor including a lower substrate having two electrodes partially covered with a semiconductor layer and a piezoelectric layer made of a piezoelectric material, and in contact with the semiconductor layer in such a way that semiconductor material is in contact with the piezoelectric material and with the two electrodes, deposited thereon. The electrodes are intended to be connected to a voltage source or to a device for measuring the intensity of a current generated by the displacement of the electric charges in the semiconductor layer between the electrodes, said electric charges being created when a pressure is exerted on the piezoelectric layer. REPLACEMENT SHEET
A pressure sensor comprising a piezoelectric material, wherein it comprises at least one lower substrate having two electrodes, partially covered with a semiconductor layer made of a semiconductor material, deposited thereon, and a piezoelectric layer made of a piezoelectric material, and in contact with the semiconductor layer in such a way that semiconductor material is in contact with the piezoelectric material and with the two electrodes, the piezoelectric layer being systematically in contact with the electrodes, said electrodes being capable of being connected to a voltage source or to a device for measuring the intensity of a current generated by the displacement of electric charges in the semiconductor layer between the electrodes, said electric charges being created when a pressure is exerted on the piezoelectric layer.
Dependencies are inferred from the claim text.