X-ray-sensitive devices and systems using organic pn junction photodiodes
AssigneesBeck Radiological Innovations Inc, The Johns Hopkins University
InventorsHoward E. Katz, Hoyoul Kong, Thomas J. Beck
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Abstract
An x-ray detector includes a first electrode, a second electrode spaced apart from the first electrode, an organic p-type semiconducting layer disposed between the first and second electrodes, and an organic n-type semiconducting layer disposed between the first and second electrodes and in contact with the organic p-type semiconducting layer to form a pn-junction layer therebetween. At least one of the organic p-type semiconducting layer or the organic n-type semiconducting layer includes an x-ray absorbing material blended therein.
Claims29
An x-ray detector, comprising:
- a first electrode;
- a second electrode spaced apart from said first electrode;
- an organic p-type semiconducting layer disposed between said first and second electrodes;
- and
- an organic n-type semiconducting layer disposed between said first and second electrodes and in contact with said organic p-type semiconducting layer to form a pn-junction layer therebetween,
- wherein at least one of said organic p-type semiconducting layer or said organic n-type semiconducting layer comprises an x-ray absorbing material blended therein.
An x-ray detector, comprising:
- a first electrode;
- a second electrode spaced apart from said first electrode;
- an organic p-type semiconducting layer disposed between said first and second electrodes;
- an organic n-type semiconducting layer disposed between said first and second electrodes and in contact with said organic p-type semiconducting layer to form a pn-junction layer therebetween;
- and
- an x-ray absorbing layer disposed proximate at least one of said organic p-type semiconducting layer or said organic n-type semiconducting layer such that secondary electrons produced in said x-ray absorbing layer in response to absorbed x-rays excite at least one of said organic p-type semiconducting layer or said organic n-type semiconducting layer.
An x-ray imaging system, comprising an array of x-ray detector elements, wherein at least one x-ray detector element of said array of x-ray detector elements comprises:
- a first electrode;
- a second electrode spaced apart from said first electrode;
- an organic p-type semiconducting layer disposed between said first and second electrodes;
- and
- an organic n-type semiconducting layer disposed between said first and second electrodes and in contact with said organic p-type semiconducting layer to form a pn-junction layer therebetween,
- wherein at least one of said organic p-type semiconducting layer or said organic n-type semiconducting layer comprises an x-ray absorbing material blended therein.
An x-ray imaging system, comprising an array of x-ray detector elements, wherein at least one x-ray detector element of said array of x-ray detector elements comprises:
- a first electrode;
- a second electrode spaced apart from said first electrode;
- an organic p-type semiconducting layer disposed between said first and second electrodes;
- an organic n-type semiconducting layer disposed between said first and second electrodes and in contact with said organic p-type semiconducting layer to form a pn-junction layer therebetween;
- and
- an x-ray absorbing layer disposed proximate at least one of said organic p-type semiconducting layer or said organic n-type semiconducting layer such that secondary electrons produced in said x-ray absorbing layer in response to absorbed x-rays excite at least one of said organic p-type semiconducting layer or said organic n-type semiconducting layer.
A tissue-equivalent radiation detector, comprising:
- a first electrode;
- a second electrode spaced apart from said first electrode;
- an organic p-type semiconducting layer disposed between said first and second electrodes;
- and
- an organic n-type semiconducting layer disposed between said first and second electrodes and in contact with said organic p-type semiconducting layer to form a pn-junction layer therebetween,
- wherein said organic p-type semiconducting layer and said organic n-type semiconducting layer together have an average atomic number that is approximately 7.4 to substantially match an average atomic number of muscle tissue.
Dependencies are inferred from the claim text.