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US 2014/0191198 A1Published application
Graphene electronic devices and methods of manufacturing the same
AssigneeSamsung Electronics Co., Ltd.
InventorsYong-sung KIM, Chang-seung LEE, Joo-ho LEE
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Abstract
A graphene electronic device includes: a first conductive layer and a semiconductor layer on a first region of an intermediate layer; a second conductive layer on a second region of the intermediate layer; a graphene layer on the intermediate layer, the semiconductor layer, and the second conductive layer; and a first gate structure and a second gate structure on the graphene layer.
Claims24
A graphene electronic device comprising:
- a first conductive layer and a semiconductor layer on a first region of an intermediate layer;
- a second conductive layer on a second region of the intermediate layer;
- a graphene layer on the intermediate layer, the semiconductor layer, and the second conductive layer;
- and
- a first gate structure and a second gate structure on the graphene layer.
2 more elements
A method of forming a graphene electronic device, the method comprising:
- forming a semiconductor layer, a first conductive layer, and a second conductive layer on a substrate;
- forming an intermediate layer on the substrate, the semiconductor layer, the first conductive layer, and the second conductive layer;
- forming a graphene layer on the intermediate layer, the semiconductor layer, and the second conductive layer;
- and
- forming a first gate structure and a second gate structure on the graphene layer.
2 more elements
A graphene electronic device comprising:
- a graphene transistor having a channel including a graphene layer and an electrode including a semiconductor layer;
- and
- a graphene tunable diode having a diode region including the graphene layer and the semiconductor layer.
Dependencies are inferred from the claim text.