Nitride semiconductor light-emitting element having superior current spreading effect and method for manufacturing same

A method for manufacturing a nitride semiconductor light emitting device, comprising:

• forming an n-type nitride layer on a substrate;
• forming a current spreading part on the n-type nitride layer;
• forming an activation layer on the current spreading part;
• and
• forming a p-type nitride layer on the activation layer,
• wherein the current spreading part is formed of a nitride comprising current spreading impurities, the current spreading impurities comprise carbon (C), and the current spreading part is formed by doping the current spreading impurities together with a silicon dopant.

A nitride semiconductor light emitting device comprising:

• an n-type nitride layer;
• a current spreading part formed on the n-type nitride layer and containing current spreading impurities and a silicon (Si) dopant;
• an activation layer formed on the current spreading part;
• a p-type nitride layer formed on the activation layer,
• wherein the current spreading impurities comprise carbon (C), and the current spreading part has a multilayer structure formed by alternately stacking a layer having a higher carbon (C) concentration than silicon (Si) concentration and a layer having a higher silicon (Si) concentration than carbon (C) concentration.

A method for manufacturing a nitride semiconductor light emitting device, comprising:

• forming an n-type nitride layer on a substrate;
• forming a current spreading part of a multilayer structure containing current spreading impurities and a silicon (Si) dopant on the n-type nitride layer;
• forming an activation layer on the current spreading part;
• and
• forming a p-type nitride layer on the activation layer,
• wherein the current spreading impurities comprise carbon (C), and the current spreading part is formed by alternately stacking a layer having a higher carbon (C) concentration than silicon (Si) concentration and a layer having a higher silicon (Si) concentration than carbon (C) concentration.