Submicro-facet light-emitting device and method for fabricating the same
AssigneeInvenlux Corporation
InventorJIANPING ZHANG
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Abstract
A light emitting device comprises an n-type layer, a p-type layer, and an active region sandwiched between the n-type layer and the p-type layer, wherein the active-region has a wavy structure with nano or micro fluctuations in its thickness direction. The n-type layer comprises crystal facets on its upper surface, and the active-region is conformally formed on the upper surface of the n-type layer and substantially follows the shape of the crystal facets so as to form the wavy structure. A method for fabricating the same is also provided.
Claims21
A light emitting device comprising:
- a substrate;
- an n-type layer formed over the substrate;
- a p-type layer;
- an active region sandwiched between the n-type layer and the p-type layer;
- wherein the active-region is a continuous layer over substantially an entire upper surface of the substrate and has a wavy structure with nano or micro fluctuations in its thickness direction.
12-20. (canceled)
A light emitting device comprising:
- an n-type layer;
- a p-type layer;
- an active region sandwiched between the n-type layer and the p-type layer;
- wherein the active-region has a wavy structure with nano or micro fluctuations in its thickness direction;
- wherein the n-type layer comprises crystal facets on its upper surface, and the active-region is conformally formed on the upper surface of the n-type layer and substantially follows the shape of the crystal facets so as to form the wavy structure;
- wherein the n-type layer comprises (00.1)-oriented III-nitride pillars and the crystal facets are formed on top of the (00.1)-oriented III-nitride pillars, wherein each of the pillars provides six facets due to six-fold crystal structure symmetry;
- or the n-type layer comprises (111)-oriented III-nitride pillars and the crystal facets are formed on top of the (111)-oriented III-nitride pillars, wherein each of the pillars provides four facets due to four-fold crystal structure symmetry;
- and
- wherein the (00.1)-oriented III-nitride pillars contain a strain-modulation structure which contains a silicon concentration peak of above 5×1019 cm−3 with a full-width at half-maximum (FWHM) of 15-20 nm, when being measured by a depth profiling metrology such as secondary ion mass spectrometry (SIMS).
A light emitting device comprising:
- an n-type layer comprising pillars extruding along a thickness direction of the n-type layer, wherein each of the pillars has a pillar body and a tapering pillar top formed on top of the pillar body, and the tapering pillar top has crystal facets;
- a p-type layer;
- an active region sandwiched between the n-type layer and the p-type layer;
- wherein the active-region has a wavy structure with nano or micro fluctuations in its thickness direction, the active-region is conformally formed on the crystal facets of the tapering pillar tops of the pillars and substantially follows the shape of the crystal facets so as to form the wavy structure.
Dependencies are inferred from the claim text.