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US 2014/0191183 A1Published application
Resistive random access memory
AssigneeNational Tsing Hua University
InventorsYu-Lun CHUEH, Chi-Hsin HUANG
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Abstract
A resistive random access memory includes a first electrode, a second electrode and a first metal oxide composite layer. The second electrode is opposite to the first electrode. The first metal oxide composite layer is disposed between the first electrode and the second electrode. The first metal oxide composite layer has a film layer and a nanorod structure.
Claims10
A resistive random access memory, comprising:
- a first electrode;
- a second electrode opposite to the first electrode;
- and
- a first metal oxide composite layer disposed between the first electrode and the second electrode, wherein the first metal oxide composite layer has a film layer and a nanorod structure.
1 more element
Dependencies are inferred from the claim text.