Method of manufacturing a magnetoresistive device
AssigneeEverspin Technologies, Inc.
InventorsSarin Deshpande, Sanjeev Aggarwal, Kerry Nagel
Life of this patent
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Abstract
A method of manufacturing a magnetoresistive-based device includes a metal hard mask that is inert to a top electrode etch chemistry and that has low sputter yield during a magnetic stack sputter. The metal hard mask is patterned by the photo resist and the photo mask is then stripped and the top electrode (overlying magnetic materials of the magnetoresistive-based device) is patterned by the metal hard mask.
Claims20
A method of manufacturing a magnetoresistive-based device, comprising:
- providing a magnetic material layer;
- depositing a metal layer over the magnetic material layer;
- depositing a patterned photo resist over the metal layer;
- etching the metal layer not covered by the patterned photo resist to form an electrically conductive electrode;
- removing the patterned photo resist;
- and
- etching the magnetic material layer not covered by the electrically conductive electrode to form a magnetic material stack.
A method of manufacturing a magnetoresistive-based device, comprising:
- providing a magnetic material layer;
- depositing an electrically conductive layer over the magnetic material;
- depositing a metal hard mask layer over the electrically conductive layer;
- depositing a patterned photo resist over the metal hard mask layer;
- etching the metal hard mask layer not covered by the patterned photo resist to form a metal hard mask;
- removing the patterned photo resist;
- etching the electrically conductive layer not covered by the metal hard mask to form an electrically conductive electrode;
- and
- etching the magnetic material layer not covered by the electrically conductive electrode to form a magnetic material stack.
A method of manufacturing a magnetoresistive-based device, comprising:
- providing a magnetic material layer;
- depositing a metal material layer over the magnetic material;
- depositing a patterned photo resist over the metal material layer;
- etching the metal material layer not covered by the patterned photo resist to form a electrically conductive electrode;
- removing the patterned photo resist;
- and
- etching the magnetic material layer not covered by the electrically conductive electrode to form a magnetic material stack.
Dependencies are inferred from the claim text.