Electrochemical liquid-liquid-solid deposition processes for production of group iv semiconductor materials

A method for forming a crystalline material comprising:

• contacting a liquid electrolyte with a first liquid electrode, wherein the first liquid electrode is in electrical communication with a second electrode having a second opposite polarity from the first liquid electrode, wherein the liquid electrolyte is formed by combining water and an oxide compound comprising a Group IV semiconductor element, and wherein the first liquid electrode comprises a metal selected from the group consisting of:
• mercury, gallium, indium, zinc, cadmium, combinations and alloys thereof;
• and
• generating a crystalline material comprising the Group IV semiconductor element by applying an electric potential to the first liquid electrode in contact with the electrolyte to drive an electrochemical reduction reaction that generates the crystalline material comprising the Group IV semiconductor element by precipitation at or within the first liquid electrode.