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US 2014/0190564 A1Published application
Heterojunction iii-v solar cell performance
AssigneeInternational Business Machines Corporation
InventorsStephen W. Bedell, Bahman Hekmatshoartabari, Devendra K. Sadana, Ghavam G. Shahidi, Davood Shahrjerdi
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Abstract
An InxGa1-xAs interlayer is provided between a III-V base and an intrinsic amorphous semiconductor layer of a heterojunction III-V solar cell structure. Improved surface passivation and open circuit voltage may be obtained through the incorporation of the interlayer within the structure.
Claims16
1-10. (canceled)
A heterojunction III-V solar cell structure, comprising:
- a base layer comprising one of GaAs and InyGa1-yAs;
- an intrinsic semiconductor layer;
- an epitaxial InxGa1-xAs interlayer between and interfacing with the base layer and the intrinsic semiconductor layer, wherein 0.01<x<1.0 and y<x, the base layer and the InxGa1-xAs interlayer having the same doping type;
- a doped hydrogenated amorphous silicon layer on the intrinsic semiconductor layer, the doped hydrogenated amorphous silicon layer having a doping type with respect to the base layer to function as one of an emitter or back surface field operatively associated with the base layer, and
- a transparent conductive layer on the doped hydrogenated amorphous silicon layer.
2 more elements
A heterojunction III-V solar cell structure, comprising:
- a base layer comprising gallium arsenide;
- an intrinsic semiconductor layer;
- an epitaxial InxGa1-xAs interlayer between and interfacing with the base layer and the intrinsic semiconductor layer, wherein 0.01<x<1.0;
- a doped hydrogenated amorphous silicon layer on the intrinsic semiconductor layer, and
- a transparent conductive layer above the hydrogenated amorphous silicon layer,
- the base layer and the InxGa1-xAs interlayer having a first doping type, the doped hydrogenated amorphous silicon layer having a second doping type opposite from the first doping type and being operatively associated with the base layer as an emitter.
3 more elements
Dependencies are inferred from the claim text.