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US 2014/0190542 A1Published application
Wafer scale thermoelectric energy harvester
AssigneeAnalog Devices Technology
InventorsWilliam Allan LANE, Baoxing CHEN
Life of this patent
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Abstract
An integrated circuit may include a substrate and a dielectric layer formed over the substrate. A plurality of p-type thermoelectric elements and a plurality of n-type thermoelectric elements may be disposed within the dielectric layer. The p-type thermoelectric elements and the n-type thermoelectric elements may be connected in series while alternating between the p-type and the n-type thermoelectric elements.
Claims24
A thermoelectric harvester, comprising:
- a pair of layers at least on for coupling to a heat source;
- a plurality of thermoelectric elements disposed within a space between the layers and having a run length that is greater than a distance of separation between the layers, wherein:
- the thermoelectric elements are electrically coupled together in series in alternating device types, and
- the thermoelectric elements are coupled to both of the layers at opposite ends thereof.
1 more element
A thermoelectric harvester, comprising:
- a substrate;
- a dielectric layer formed over the substrate;
- a plurality of thermoelectric elements disposed within the dielectric layer, the thermoelectric elements having a run length that is greater than a distance of separation between the first and second thermal conductor layers;
- and
- wherein the thermoelectric elements are electrically coupled together in series in alternating device types.
2 more elements
A thermoelectric harvester, comprising:
- a substrate including a first thermal conductor layer on a first surface of the substrate;
- a second thermal conductor layer disposed above the first thermal conductor layer;
- a plurality of p-type thermoelectric elements disposed between the first thermal conductor layer and the second thermal conductor layer, the p-type thermoelectric elements having a run length that is greater than a distance of separation between the first and second thermal conductor layers;
- a plurality of n-type thermoelectric elements disposed between the first thermal conductor layer and the second thermal conductor layer, the n-type thermoelectric elements having a run length that is greater than a distance of separation between the first and second thermal conductor layers;
- and
- wherein the p-type thermoelectric elements and the n-type thermoelectric elements are connected in series while alternating between the p-type and the n-type thermoelectric elements.
3 more elements
Dependencies are inferred from the claim text.