Apparatus and method for edge bevel removal of copper from silicon wafers

An apparatus for removing unwanted metal deposited on an edge bevel area of a semiconductor wafer, the apparatus comprising:

• a process chamber;
• a wafer chuck for supporting and rotating the wafer during removal of the edge bevel area;
• and
• a controller comprising:
• program instructions for rotating the wafer;
• program instructions for prerinsing the wafer using a prerinse liquid;
• program instructions for delivering a stream of a thinning liquid into a layer of the prerinse liquid near the edge bevel area of the rotating wafer thereby thinning the layer of the prerinse liquid;
• and
• program instructions for delivering a stream of liquid etchant into the thinned layer of prerinse liquid near the edge bevel area of the rotating wafer.

An apparatus for removing unwanted metal deposited on an edge bevel area of a semiconductor wafer, the apparatus comprising:

• a process chamber;
• a wafer chuck for supporting and rotating the wafer during removal of the edge bevel area;
• and
• a controller comprising:
• program instructions for rotating the wafer;
• program instructions for prerinsing the wafer using a prerinse liquid;
• program instructions for delivering a stream of a thinning liquid into a layer of the prerinse liquid near the edge bevel area of the rotating wafer thereby thinning a layer of the prerinse liquid;
• program instructions for delivering a vapor or aerosol of a thinning agent over a layer of the prerinse liquid near the edge bevel area of the rotating wafer thereby thinning the layer of the prerinse liquid;
• and
• program instructions for delivering a stream of liquid etchant into the thinned layer of prerinse liquid near the edge bevel area of the rotating wafer.

An apparatus for removing unwanted metal deposited on an edge bevel area of a semiconductor wafer, the apparatus comprising:

• a process chamber;
• a wafer chuck for supporting and rotating the wafer during removal of the edge bevel area;
• and
• a controller comprising:
• program instructions for rotating the wafer;
• program instructions for prerinsing the wafer using a prerinse liquid;
• program instructions for delivering a stream of a thinning liquid into a layer of the prerinse liquid near the edge bevel area of the rotating wafer thereby thinning a layer of the prerinse liquid;
• program instructions for heating a layer of the prerinse liquid thereby thinning the layer of the prerinse liquid;
• and
• program instructions for delivering a stream of liquid etchant into the thinned layer of prerinse liquid near the edge bevel area of the rotating wafer.