Back to results
US 2014/0190401 A1Published application
Method, system, and apparatus for doping and for multi-chamber high-throughput solid-phase epitaxy deposition process
OwnerFareed SEPEHRY-FARDinventor
Life of this patent
Estimating the term…
Abstract
A doping and multi-chamber method and apparatus for the growth of material, directed toward Solid Phase Epitaxy (SPE) process, is disclosed. Different variations and features of this method and process are examined. The advantages of this method are the high throughput and the reduced operational cost of the production for semiconductor material and devices, such as III-V material (e.g. GaAs) and solar cell devices. It can be applied to many systems and devices/materials.
Claims20
A method for the growth of material, comprising:
- separating a first source and a first substrate by one or more spacers;
- heating the source and substrate in the presence of a first gas under conditions sufficient to transfer material from the source to the substrate;
- and
- providing a second gas to the source and substrate qualitatively and/or quantitatively different from the first gas.
1 more element
Dependencies are inferred from the claim text.