Epitaxial wafer manufacturing device and manufacturing method

An epitaxial wafer manufacturing device that deposits and grows epitaxial layers on the surfaces of heated wafers while supplying a raw material gas to a chamber, provided with:

• a susceptor having a plurality of mounting portions on which the wafers are mounted, wherein the plurality of mounting portions are arranged in a row in the circumferential direction;
• a top plate arranged in opposition to the upper surface of the susceptor so as to form a reaction space between the top plate and the susceptor;
• a heating means arranged on the lower surface side of the susceptor and/or upper surface side of the top plate for heating the wafers mounted on the mounting portions;
• a gas supply means having a gas inlet for introducing the raw material gas from a central portion of the upper surface of the top plate to the reaction space, that supplies raw material gas released from the gas inlet from the inside to the outside of the reaction space;
• and,
• a shield arranged in close proximity to the lower surface of the top plate so as to prevent deposits from being deposited on the lower surface of the top plate;
• wherein,
• in addition to being removably attached inside the chamber, the shield has an opening in the central portion thereof that forces the gas inlet to face the inside of the reaction space, and has a structure in it is divided into a plurality of ring plates that are concentric around the opening.