Ingot growing apparatus and method of manufacturing ingot
AssigneeLG Siltron Inc.
InventorsJin-Woo Ahn, Bong-Woo Kim, Il-Soo Choi, Do-Yeon Kim
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Abstract
Provided is an ingot growing apparatus, which includes a crucible containing a silicon melt, a pulling device pulling a silicon single crystal ingot grown from the silicon melt, and a dopant supply unit disposed adjacent to the pulling device and for supplying a dopant during growing of the ingot. The neck portion may be doped at a concentration higher than that of the ingot through the dopant supply unit. Therefore, dislocation propagation velocity may be decreased and a propagation length may be shortened.
Claims14
An ingot growing apparatus comprising:
- a crucible containing a silicon melt;
- a pulling device pulling a silicon single crystal ingot grown from the silicon melt;
- and
- a dopant supply unit disposed adjacent to the pulling device and for supplying a dopant during growing of the ingot, wherein the pulling device comprises a seed chuck holding a seed crystal and the dopant supply unit is combined with the seed chuck.
(canceled)
A method of manufacturing an ingot, the method comprising:
- preparing a silicon melt;
- immersing a seed crystal and a dopant supply unit being positioned by surrounding the seed crystal in the silicon melt;
- forming a neck portion from the silicon melt by pulling the seed crystal;
- and
- growing an ingot from the silicon melt after forming the neck portion.
Dependencies are inferred from the claim text.