Selective titanium nitride etching
AssigneeApplied Materials, Inc.
InventorsJie Liu, Jingchun Zhang, Anchuan Wang, Nitin K. Ingle, Seung Park, Zhijun Chen, Ching-Mei Hsu
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Abstract
Methods of etching exposed titanium nitride with respect to other materials on patterned heterogeneous structures are described, and may include a remote plasma etch formed from a fluorine-containing precursor. Precursor combinations including plasma effluents from the remote plasma are flowed into a substrate processing region to etch the patterned structures with high titanium nitride selectivity under a variety of operating conditions. The methods may be used to remove titanium nitride at faster rates than a variety of metal, nitride, and oxide compounds.
Claims20
A method of etching a patterned substrate in a substrate processing region of a substrate processing chamber, wherein the patterned substrate includes an exposed titanium nitride region and a region comprising an exposed second material, the method comprising:
- flowing a fluorine-containing precursor into a remote plasma region fluidly coupled with the substrate processing region while forming a plasma in the remote plasma region to produce plasma effluents;
- flowing at least one additional precursor into the substrate processing region;
- and
- etching the exposed titanium nitride region with the precursor combination including the plasma effluents, wherein the titanium nitride is etched at a faster rate than the exposed second material.
Dependencies are inferred from the claim text.