Transition metal aluminate and high k dielectric semiconductor stack
AssigneeIntermolecular, Inc.
InventorSalil Mujumdar
Life of this patent
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Abstract
Methods of forming a high K dielectric semiconductor stack are described. A semiconductor substrate is provided, in which the native oxide layer is removed. A transition metal aluminate layer is deposited onto the semiconductor substrate across discrete multiple regions in a combinatorial manner. A high K dielectric layer is deposited onto the transition metal aluminate layer across the discrete multiple regions in a combinatorial manner. The transition metal aluminate layer and the high K dielectric layer are patterned to form a plurality of high K dielectric semiconductor stacks across discrete multiple regions. A three-five semiconductor substrate or a germanium substrate can be used in methods of forming a high K dielectric semiconductor stack.
Claims20
A method of forming a high K dielectric semiconductor stack, the method comprising:
- defining a plurality of site-isolated regions on a surface of a substrate;
- depositing a transition metal aluminate layer on each of the plurality of site-isolated regions,
- wherein the transition metal aluminate layer in each of the plurality of site-isolated regions comprises aluminum oxide and transition metal oxide, and
- wherein a concentration ratio of the aluminum oxide to the transition metal oxide in the transition metal aluminate layer is combinatorially varied to differ between at least two of the plurality of site-isolated regions on the surface of the substrate;
- and
- depositing a high K dielectric layer onto each of the transition metal aluminate layers formed within the plurality of site-isolated regions.
10-20. (canceled)
Dependencies are inferred from the claim text.