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US 2014/0175601 A1Published application
Anti-fuse structure and anti-fuse programming method
AssigneeUnited Microelectronics Corp.
InventorChih-Yuan Ho
Life of this patent
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Abstract
An anti-fuse structure includes a substrate having at least a shallow trench isolation formed therein, a notch formed between the substrate and the STI, an electrode structure formed on the substrate, the electrode structure filling the notch, and a doped region formed in the substrate on a side of the electrode structure opposite to the notch.
Claims18
An anti-fuse structure comprising:
- a substrate having at least a shallow trench isolation (STI) formed therein;
- a notch formed between the substrate and the STI;
- a electrode structure formed on the substrate, the electrode structure filling the notch;
- and
- a doped region formed in the substrate on a side of the electrode structure opposite to the notch.
2 more elements
An anti-fuse structure comprising:
- a substrate having at least an insulating structure formed therein;
- a conductive layer formed on the substrate, the conductive layer comprising at least a first part covering a portion of the substrate and a portion of the insulating structure;
- and
- a doped region formed in the substrate on a side of the conductive layer opposite to the insulating structure.
1 more element
An anti-fuse programming method comprising:
- providing an anti-fuse structure, and the anti-fuse structure comprising:
- a substrate having at least a STI formed therein;
- a notch formed between the substrate and the STI;
- an electrode structure formed on the substrate, the electrode structure filling the notch;
- and
- a doped region formed in the substrate on a side of the electrode structure opposite to the notch;
- providing a programming voltage to the anti-fuse structure;
- and
- forming a rupture point located at the notch.
6 more elements
Dependencies are inferred from the claim text.