US 2014/0175594 A1 · ACTIVE PAD PATTERNS FOR GATE ALIGNMENT MARKS

Abstract

Methods for forming RX pads having gate alignment marks configured to enable noise reduction between layers while resulting in little or no non-uniformity of CMP processes for the IC, and the resulting devices, are disclosed. Embodiments include: providing, on a substrate, a RX pad having a SPM with a SPM horizontal and vertical positions at horizontal and vertical midpoints, respectively, of the first RX pad; providing a second RX pad abutting the first RX pad and a first STI pad abutting the second RX pad, each having a vertical midpoint at the SPM vertical position; forming a first gate alignment mark on the second RX pad and having vertical endpoints horizontally aligned with vertical endpoints of the second RX pad; and forming a second gate alignment mark on the first STI pad and having vertical endpoints horizontally aligned with vertical endpoints of the first STI pad.

Claims20

Dependent claims

A method comprising:

providing, on a substrate, a first active (RX) pad having a scribe line primary mark (SPM) with a SPM horizontal position at horizontal midpoint of the first RX pad and a SPM vertical position at a vertical midpoint of the first RX pad;
providing a second RX pad abutting the first RX pad having a vertical midpoint at the SPM vertical position;
providing a first shallow trench isolation (STI) pad abutting the second RX pad and having a vertical midpoint at the SPM vertical position;
forming a first gate alignment mark on the second RX pad and having vertical endpoints horizontally aligned with vertical endpoints of the second RX pad;
and
forming a second gate alignment mark on the first STI pad and having vertical endpoints horizontally aligned with vertical endpoints of the first STI pad.

3 more elements

A method comprising:

providing on a substrate first and second active (RX) pads each extending in a horizontal direction;
providing on the substrate a first shallow trench isolation (STI) pad extending in the horizontal direction, separating the first and second RX pads;
providing a scribe line primary mark (SPM) centered horizontally and vertically on the first RX pad;
and
forming a plurality of gate alignment marks on the first and second RX pads and the first STI pad, each of the gate alignment marks extending in a vertical direction, and each having an endpoint on a horizontal edge of the second RX pad.

2 more elements

An apparatus comprising:

first and second active (RX) pads on a substrate, each extending in a horizontal direction;
a first shallow trench isolation (STI) pad on the substrate extending in the horizontal direction, separating the first and second RX pads;
a scribe line primary mark (SPM) centered horizontally and vertically on the first RX pad;
and
a plurality of gate alignment marks on the first and second RX pads and the first STI pad, each of the gate alignment marks extending in a vertical direction, and each having an endpoint on a horizontal edge of the second RX pad.

2 more elements

Dependencies are inferred from the claim text.

Active pad patterns for gate alignment marks

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Active pad patterns for gate alignment marks

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Abstract

Claims20