Semiconductor apparatus and fabrication method thereof

A method of fabricating a semiconductor apparatus, the method comprising:

• forming an insulating layer in a semiconductor substrate to be spaced from a surface of the semiconductor substrate by a predetermined depth, thereby confining a first semiconductor layer on the insulating layer;
• patterning predetermined portions of the first semiconductor layer and the insulating layer to expose the surface of the semiconductor substrate below the insulating layer;
• forming a semiconductor layer burying the patterned portions using the first semiconductor layer;
• and
• patterning the semiconductor layer burying the patterned portion and the remaining insulating layer to extend to the first direction to form an active region.