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US 2014/0175523 A1Published application
Method of Manufacturing a Sensor Device Having a Porous Thin-Film Metal Electrode
AssigneeRobert Bosch GmbH
InventorsAndo Feyh, Gary O'Brien, Fabian Purkl, Gary Yama, Ashwin K. Samarao
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Abstract
A method of fabricating a semiconductor sensor device includes providing a substrate, supporting a source region and a drain region with the substrate, forming an insulator layer above the source region and the drain region, and forming a porous metallic gate region above the insulator layer using plasma enhanced atomic layer deposition (PEALD).
Claims16
A method of fabricating a semiconductor sensor device comprising:
- providing a substrate;
- supporting a source region and a drain region with the substrate;
- forming an insulator layer above the source region and the drain region;
- and
- forming a porous metallic gate region above the insulator layer using plasma enhanced atomic layer deposition (PEALD).
2 more elements
A semiconductor sensor device comprising:
- a plastic substrate configured to support a source region and a drain region;
- an insulator layer located above the substrate;
- and
- a porous metallic gate region located above the insulator layer.
1 more element
Dependencies are inferred from the claim text.