Back to results
US 2014/0175517 A1Published application
Field effect transistor
AssigneesHuga Optotech Inc., Epistar Corporation
InventorsChih-Ching CHENG, Tsung-Cheng CHANG
Life of this patent
Estimating the term…
Abstract
A field effect transistor (FET) disclosed herein comprising a substrate, a C-doped semiconductor layer disposed on the substrate, a channel layer disposed on the C-doped semiconductor layer, and an electron supply layer disposed on the channel layer. The FET further comprises a diffusion barrier layer disposed between the C-doped semiconductor layer and the channel layer, wherein the diffusion barrier layer contacts the channel layer directly.
Claims20
A field effect transistor, comprising:
- a substrate;
- a C-doped semiconductor layer disposed on the substrate;
- a channel layer disposed on the C-doped semiconductor layer;
- an electron supply layer disposed on the channel layer, wherein a two-dimensional electron gas generates in an interface between the channel layer and the electron supply layer;
- and
- a diffusion barrier layer comprising an Al content and disposed between the C-doped semiconductor layer and the channel layer, wherein the diffusion barrier layer contacts the channel layer directly.
3 more elements
A field effect transistor, comprising:
- a substrate;
- a first Al-containing semiconductor layer disposed over the substrate and being a C-doped layer;
- a second Al-containing semiconductor layer disposed on the first Al-containing semiconductor layer;
- a third Al-containing semiconductor layer disposed on the second Al-containing semiconductor layer;
- and
- a diffusion barrier layer comprising an Al content and disposed between the first Al-containing semiconductor layer and the second Al-containing semiconductor layer, wherein the Al content in the diffusion barrier layer is greater than an Al content in the first Al-containing semiconductor layer and an Al content in the second Al-containing semiconductor layer.
3 more elements
Dependencies are inferred from the claim text.